Determination of complex dielectric functions of ion implanted and implanted‐annealed amorphous silicon by spectroscopic ellipsometry

Determination of complex dielectric functions of ion implanted and implanted-annealed amorphous silicon by spectroscopic ellipsometry

Measuring with a spectroscopic ellipsometer (SE) in the 1.845 eV photon energy region we determined the complex dielectric function (E = e1 + ieZ> of different kinds of amorphous silicon prepared by self-implantation and thermal relaxation (500 “C, 3 h) . These measurements show that the complex dielectric function (and thus the complex refractive index) of implanted a-Si (i-a-Si) differs from ...

Optical absorption studies of ion implanted and amorphous silicon

A detailed study of the implantation induced damage in Si on sapphire, carried out by optical absorption measurements extending from energies above the band gap down to energies far into the sub gap region of Si, is presented. The changes induced in the optical band gap, band edge slopes and in the sub gap features of the spectra are carefully described. The various stages of formation and quen...

Non-destructive Characterization of Nitrogen-implanted Silicon-on- insulator Structures by Spectroscopic Ellipsometry*

1. Introduction Silicon-on-insulator (SO1) structures implanted with 200 or 400 keV N ÷ ions at a dose of 7.5×1017cm 2 were studied by spectroscopic ellipsometry (SE). The SE measurements were carried out in the 300-700 nm wavelength (4.13-1.78 eV photon energy) range. The SE data were analysed by the conventional method of using appropriate optical models" and linear regression analysis. We ap...

Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon

The kinetics of stressed solid-phase epitaxial growth (SPEG), also referred to as solid-phase epitaxy, solidphase epitaxial regrowth, solid-phase epitaxial recrystallization, and solid-phase epitaxial crystallization, of amorphous (a) silicon (Si) created via ion-implantation are reviewed. The effects of hydrostatic, in-plane uniaxial, and normal uniaxial compressive stress on SPEG kinetics are...

Spectroscopic Ellipsometry of Ion-Implantation-Induced Damage